Jigon fim ɗin bakin ciki shine a lulluɓin fim ɗin a kan babban kayan da ke cikin na'ura mai kwakwalwa. Ana iya yin wannan fim da abubuwa daban-daban, irin su insulating fili silicon dioxide, semiconductor polysilicon, karfe jan karfe, da dai sauransu. Kayan aikin da ake amfani da shi don shafa ana kiransa kayan kwalliyar fim na bakin ciki.
Daga hangen nesa na tsarin samar da guntu na semiconductor, yana cikin tsarin gaba-gaba.
Tsarin shirye-shiryen fim na bakin ciki za a iya kasu kashi biyu bisa ga hanyar samar da fim ɗinsa: jigilar tururi ta jiki (PVD) da jigilar sinadarai.(CVD), daga cikin abin da kayan aikin CVD ke yin lissafin mafi girma.
Ƙwararren tururi na jiki (PVD) yana nufin vaporization na farfajiyar tushen kayan abu da kuma sanyawa a saman ƙasa ta hanyar ƙananan iskar gas / plasma, ciki har da evaporation, sputtering, ion beam, da dai sauransu;
Tushen sinadarai (CVD) yana nufin tsarin adana fim mai ƙarfi a saman silin siliki ta hanyar sinadarai na cakuda gas. Dangane da yanayin halayen (matsi, precursor), an raba shi zuwa matsa lamba na yanayiCVD(APCVD), ƙananan matsa lambaCVD(LPCVD), plasma inganta CVD (PECVD), high density plasma CVD (HDPCVD) da atomic Layer ajiya (ALD).
LPCVD: LPCVD yana da mafi kyawun iya ɗaukar matakin mataki, ingantaccen abun da ke ciki da sarrafa tsari, ƙimar ƙima da fitarwa, kuma yana rage tushen gurɓataccen ƙwayar cuta. Dogaro da kayan aikin dumama azaman tushen zafi don kula da halayen, sarrafa zafin jiki da matsa lamba gas suna da mahimmanci. An yi amfani da shi sosai a masana'antar Poly Layer na sel TopCon.
PECVD: PECVD ya dogara da plasma ɗin da aka samar ta hanyar shigar da mitar rediyo don cimma ƙananan zafin jiki (kasa da digiri 450) na tsarin sanya fim na bakin ciki. Ƙarƙashin zafin jiki shine babban fa'idarsa, don haka ceton makamashi, rage farashi, haɓaka ƙarfin samarwa, da rage lalata rayuwar tsirarun dillalai a cikin wafern silicon da ke haifar da babban zafin jiki. Ana iya amfani da shi ga tafiyar matakai na sel daban-daban kamar PERC, TOPCON, da HJT.
ALD: Good film uniformity, m kuma ba tare da ramuka, mai kyau mataki ɗaukar hoto halaye, za a iya za'ayi a low zazzabi (daki zazzabi-400 ℃), iya sauƙi da kuma daidai sarrafa fim kauri, shi ne yadu zartar da substrates daban-daban siffofi, da kuma baya buƙatar sarrafa daidaiton kwararar mai amsawa. Amma rashin amfani shi ne saurin samar da fim yana da hankali. Irin su zinc sulfide (ZnS) mai haske mai haske wanda aka yi amfani da shi don samar da insulators na nanostructured (Al2O3/TiO2) da kuma firam-fim electroluminescent nuni (TFEL).
Atomic Layer Deposition (ALD) wani tsari ne na rufe fuska wanda ke samar da fim na bakin ciki akan saman Layer Layer ta Layer a cikin nau'in Layer atomic guda ɗaya. Tun a shekarar 1974, masanin kimiyyar lissafi dan kasar Finland Tuomo Suntola ya kirkiro wannan fasaha kuma ya lashe lambar yabo ta fasahar Millennium Euro miliyan 1. An yi amfani da fasahar ALD tun asali don nunin faifan lantarki mai lebur, amma ba a yi amfani da shi sosai ba. Sai a farkon karni na 21st aka fara amfani da fasahar ALD ta masana'antar semiconductor. Ta hanyar kera ultra-sikin high-dielectric kayan maye gurbin silicon oxide na gargajiya, ya sami nasarar warware matsalar ɗigon ruwa a halin yanzu sakamakon raguwar faɗin layin tasirin transistor, yana sa Dokar Moore ta ƙara haɓaka zuwa ƙananan faɗin layi. Dr. Tuomo Suntola ya taɓa faɗi cewa ALD na iya ƙara haɓaka haɓakar abubuwan haɗin gwiwa.
Bayanan jama'a sun nuna cewa Dr. Tuomo Suntola na PICOSUN a Finland ne ya ƙirƙira fasahar ALD a cikin 1974 kuma an haɓaka masana'antu a ƙasashen waje, kamar babban fim ɗin dielectric a cikin guntu na 45/32 nanometer wanda Intel ya haɓaka. A kasar Sin, kasata ta bullo da fasahar ALD fiye da shekaru 30 bayan kasashen waje. A watan Oktoba na shekarar 2010, PICOSUN a Finland da Jami'ar Fudan sun shirya taron musayar ilimi na ALD na gida na farko, wanda ya gabatar da fasahar ALD ga kasar Sin a karon farko.
Idan aka kwatanta da na al'ada tururin tururi (CVD) da kuma ajiyar iska ta jiki (PVD), amfanin Ald yana da kyau a zahiri, wanda ya dace da sarrafa ɗakunan ƙasa, wanda ya dace da girma na bakin ciki a kan fasalin farfajiya da kuma tsarin tsayayyen yanayin.
-Tsarin bayanai: Cibiyar sarrafa Micro-nano na Jami'ar Tsinghua-
A cikin zamanin baya-Moore, rikiɗawa da girman tsari na masana'antar wafer an inganta sosai. Ɗaukar kwakwalwan kwamfuta a matsayin misali, tare da karuwa a cikin adadin samar da layi tare da matakai da ke ƙasa da 45nm, musamman ma layin samarwa tare da matakai na 28nm da ƙasa, abubuwan da ake buƙata don kauri da kuma kula da daidaito sun fi girma. Bayan gabatarwar fasahar watsawa da yawa, adadin matakan ALD da kayan aiki da ake buƙata sun karu sosai; a fagen kwakwalwan ƙwaƙwalwar ajiya, tsarin masana'antu na yau da kullun ya samo asali daga 2D NAND zuwa tsarin 3D NAND, adadin yadudduka na ciki ya ci gaba da karuwa, kuma abubuwan da aka gyara sun nuna sannu-sannu mai girma, babban yanayin rabo, da kuma muhimmiyar rawa. na ALD ya fara fitowa. Daga hangen nesa na ci gaban ci gaban semiconductor na gaba, fasahar ALD za ta taka muhimmiyar rawa a cikin post-Moore.
Misali, ALD ita ce kawai fasahar sakawa da za ta iya biyan ɗaukar hoto da buƙatun aikin fim na hadaddun sifofi na 3D (kamar 3D-NAND). Ana iya ganin wannan a sarari a cikin hoton da ke ƙasa. Fim ɗin da aka ajiye a cikin CVD A (blue) ba ya rufe ƙananan ɓangaren tsarin; ko da idan an yi wasu gyare-gyaren tsari zuwa CVD (CVD B) don cimma nasarar ɗaukar hoto, aikin fim ɗin da haɗin sinadarai na yanki na ƙasa suna da talauci sosai (farin yanki a cikin adadi); akasin haka, yin amfani da fasahar ALD yana nuna cikakken ɗaukar hoto, kuma ana samun ingancin fina-finai masu inganci da daidaituwa a duk sassan tsarin.
--Hoto Fa'idodin fasahar ALD idan aka kwatanta da CVD (Source: ASM)—-
Kodayake CVD har yanzu yana mamaye kaso mafi girma na kasuwa a cikin ɗan gajeren lokaci, ALD ya zama ɗayan sassa mafi girma na kasuwar kayan aikin wafer. A cikin wannan kasuwar ALD tare da babban haɓakar haɓakawa da kuma muhimmiyar rawa a masana'antar guntu, ASM shine babban kamfani a fagen kayan aikin ALD.
Lokacin aikawa: Juni-12-2024