Maƙasudin watsawa da aka yi amfani da su a cikin haɗaɗɗun da'irori na semiconductor

Maƙasudai masu yatsaAn fi amfani da su a cikin kayan lantarki da masana'antun bayanai, irin su haɗaɗɗun da'irori, ajiyar bayanai, nunin kristal ruwa, ƙwaƙwalwar laser, na'urorin sarrafa lantarki, da dai sauransu. kayan, high-zazzabi juriya lalata, high-karshen kayan ado kayayyakin da sauran masana'antu.

Babban Tsafta 99.995% Titanium Sputtering TargetFerrum Sputtering TargetCarbon C Sputtering Target, Target Graphite

Sputtering yana daya daga cikin manyan dabarun shirya kayan fim na bakin ciki.Yana amfani da ions da aka samar ta hanyar tushen ion don haɓakawa da tarawa a cikin sarari don samar da igiyoyin ion makamashi mai sauri, jefa bama-bamai da ƙarfi, da musayar makamashin motsi tsakanin ions da ƙwararrun atoms. Atom ɗin da ke kan ƙaƙƙarfan farfajiyar suna barin ƙaƙƙarfan kuma ana ajiye su a saman ƙasa. Tushen da aka yi bama-bamai shine albarkatun kasa don adana fina-finai na bakin ciki ta hanyar sputtering, wanda ake kira sputtering target. Daban-daban iri sputtered bakin ciki film kayan da aka yadu amfani a semiconductor hadedde da'irori, rikodi kafofin watsa labarai, lebur-panel nuni da workpiece surface coatings.

Daga cikin duk masana'antu aikace-aikace, da semiconductor masana'antu yana da mafi stringent ingancin bukatun ga manufa sputtering fina-finai.High-tsarki karfe sputtering hari aka yafi amfani a wafer masana'antu da ci-gaba marufi matakai. Ɗaukar guntu masana'anta a matsayin misali, za mu iya ganin cewa daga silica wafer zuwa guntu, yana bukatar ya bi ta 7 manyan samar da matakai, wato watsawa (Thermal Process), Photo-lithography (Photo-lithography), Etch (Etch). Ion implantation (IonImplant), Babban Fim Girma (Dielectric Deposition), Chemical Mechanical Polishing (CMP), Metalization (Metalization) Hanyoyin sun dace da ɗaya bayan ɗaya. Ana amfani da maƙasudin sputtering a cikin aiwatar da "metallization". An lalata maƙasudin tare da ɓangarorin makamashi mai ƙarfi ta kayan aikin adana fim na bakin ciki sannan kuma an kafa wani Layer na ƙarfe tare da takamaiman ayyuka akan wafer siliki, kamar Layer mai ɗaukar nauyi, shinge mai shinge. Jira.Tun da hanyoyin da ke gaba dayan semiconductor sun bambanta to ana buƙatar wasu yanayi na lokaci-lokaci don tabbatar da cewa tsarin ya wanzu daidai don haka muna buƙatar wasu nau'ikan kayan dummy a wasu matakan samarwa don tabbatar da tasirin.


Lokacin aikawa: Janairu-17-2022
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