Semiconductor masana'antu bukatun na graphite abu bukatun ne musamman high, lafiya barbashi size of graphite yana da high daidaici, high zafin jiki juriya, high ƙarfi, kananan asara da sauran abũbuwan amfãni, kamar: sintered graphite kayayyakin mold.Saboda kayan aikin graphite da aka yi amfani da su a cikin masana'antar semiconductor (ciki har da masu dumama da mutuwar su) ana buƙatar jure maimaitawar dumama da tsarin sanyaya, don tsawaita rayuwar kayan aikin graphite, yawanci ana buƙatar kayan aikin graphite da aka yi amfani da su suna da ingantaccen aiki. da aikin tasirin tasirin zafi.
01 Na'urorin haɗi na Graphite don haɓakar semiconductor crystal
Duk matakan da ake amfani da su don girma lu'ulu'u na semiconductor suna aiki a ƙarƙashin yanayin zafi mai zafi da lalata. Yankin zafi na murhun girma na crystal yawanci sanye take da zafi-resistant da lalata-resistant high-tsabta graphite aka gyara, kamar hita, crucible, rufi Silinda, jagora Silinda, lantarki, crucible mariƙin, electrode nut, da dai sauransu.
Za mu iya kerarre duk graphite sassa na crystal samar na'urorin, wanda za a iya kawota akayi daban-daban ko a sets, ko musamman graphite sassa na daban-daban masu girma dabam bisa ga abokin ciniki bukatun. Ana iya auna girman samfurori a kan shafin, kuma abun cikin ash na kayan da aka gama zai iya zama ƙasafiye 5ppm.
02 Graphite na'urorin haɗi don semiconductor epitaxy
Tsarin Epitaxial yana nufin haɓakar Layer na kayan kristal guda ɗaya tare da tsari iri ɗaya kamar na ƙasa akan madaidaicin kristal guda ɗaya. A cikin tsarin epitaxial, ana ɗora wafer akan faifan graphite. Ayyuka da ingancin faifan faifan graphite suna taka muhimmiyar rawa a cikin ingancin ƙirar epitaxial na wafer. A cikin filin samar da epitaxial, ana buƙatar mai yawa ultra-high tsarki graphite da babban tsattsauran ra'ayi tare da suturar SIC.
Kamfaninmu na graphite tushe ga semiconductor epitaxy yana da fadi da kewayon aikace-aikace, iya daidaita mafi yawan fiye amfani da kayan aiki a cikin masana'antu, kuma yana da high tsarki, uniform shafi, m sabis rayuwa, da kuma high sinadaran juriya da thermal kwanciyar hankali.
03 Na'urorin haɗi na Graphite don dasa ion
Ion implantation yana nufin aiwatar da hanzarin ƙwayar plasma na boron, phosphorus da arsenic zuwa wani makamashi, sa'an nan kuma allurar da shi a cikin saman Layer na kayan wafer don canza kayan kayan da ke cikin saman Layer. Abubuwan da ke cikin na'urar da aka saka ion za a yi su da kayan tsabta mai tsabta tare da kyakkyawan juriya na zafi, ƙarancin zafin jiki, ƙarancin lalacewa ta hanyar ion beam da ƙananan ƙazanta. High-tsafta graphite gana aikace-aikace bukatun, kuma za a iya amfani da jirgin jirgin, daban-daban slits, electrodes, electrode cover, conduits, katako terminators, da dai sauransu na ion implantation kayan aiki.
Ba za mu iya ba kawai samar da graphite garkuwa murfin ga daban-daban ion implantation inji, amma kuma samar da high-tsarki graphite lantarki da kuma ion kafofin tare da high lalata juriya na daban-daban bayani dalla-dalla. Samfura masu dacewa: Eaton, Azcelis, Quatum, Varian, Nissin, AMAT, LAM da sauran kayan aiki. Bugu da kari, za mu iya samar da matching yumbu, tungsten, molybdenum, aluminum kayayyakin da rufi sassa.
04 Kayan rufin graphite da sauransu
Kayayyakin insulation na thermal da ake amfani da su a cikin kayan samar da semiconductor sun haɗa da jigon graphite, ji mai laushi, foil graphite, takarda graphite, da igiya graphite.
Dukkanin albarkatun mu ana shigo da su graphite, wanda za'a iya yanke bisa ga takamaiman girman buƙatun abokin ciniki ko kuma siyarwa gabaɗaya.
Ana amfani da tiren carbon-carbon azaman mai ɗaukar hoto don ɗaukar fim a cikin tsarin samar da siliki na monocrystalline na hasken rana da ƙwayoyin silicon polycrystalline. Ka'idar aiki ita ce: saka guntun silicon a cikin tire na CFC kuma aika shi cikin bututun tanderun don aiwatar da murfin fim.
