Kyakkyawan Silicon Carbide RBSIC/SISIC Cantilever Paddle Ana amfani da shi a Masana'antar Photovoltaic Solar

Kyakkyawar Silicon Carbide RBSIC/SISIC Cantilever Paddle Used in Solar Photovoltaic Industry Featured Image

Takaitaccen Bayani:

Fa'idodi na musamman na masu ɗaukar hoto na SiC-mai rufi sun haɗa da tsaftar tsafta, rufin kamanni da kyakkyawar rayuwar sabis. Suna kuma da babban juriya na sinadarai da kaddarorin kwanciyar hankali na thermal.

Muna kula da haƙuri sosai lokacin da ake amfani da suturar SiC, ta yin amfani da mashin ɗin daidaitaccen mashin don tabbatar da ingantaccen bayanin martaba na susceptor. Har ila yau, muna samar da kayan aiki tare da ingantattun kaddarorin juriya na lantarki don amfani da su a cikin tsarin dumama. Duk abubuwan da aka gama sun zo tare da tsafta da takardar shaidar yarda da girma.

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Cikakken Bayani

Tags samfurin

Kayan aikin da aka yi da kyau, ƙwararrun ƙwararrun ma'aikata suna samun riba, da samfuran da sabis mafi kyau bayan-tallace-tallace; Mun kuma kasance babban ma'aurata da yara, kowane mutum ya tsaya ga kamfani yana amfana "haɗin kai, sadaukarwa, haƙuri" don Kyakkyawan Silicon Carbide RBSIC / SISIC Cantilever Paddle Used in Solar Photovoltaic Industry, Muna maraba da gaske biyu na kasashen waje da na gida. Abokan kasuwancin kasuwanci, kuma muna fatan yin aiki tare da ku na kusa da dogon lokaci!
Kayan aikin da aka yi da kyau, ƙwararrun ƙwararrun ma'aikata suna samun riba, da samfuran da sabis mafi kyau bayan-tallace-tallace; Mu kuma mun kasance manyan mata da yara, kowane mutum ya tsaya kan kamfanin yana amfana “haɗin kai, sadaukarwa, haƙuri” donChina Refractory yumbu da yumbu kiln, Don saduwa da bukatun abokin ciniki na musamman ga kowane ɗan ƙaramin sabis ɗin da ya fi dacewa da ingantaccen ingancin abubuwa. Muna maraba da abokan ciniki a duk faɗin duniya don ziyartar mu, tare da haɗin gwiwar mu da yawa, da haɓaka sabbin kasuwanni tare, ƙirƙirar kyakkyawar makoma!

SiC shafi/mai rufi na Graphite substrate don Semiconductor

Susceptors rike da zafi semiconductor wafers a lokacin da thermal aiki. An yi abin da ake so ya kasance daga wani abu wanda ke ɗaukar makamashi ta hanyar shigarwa, gudanarwa, da/ko radiation kuma yana dumama wafer. Juriyar girgiza ta thermal, thermal conductivity, da tsarki suna da mahimmanci ga saurin sarrafa zafi (RTP). Silicon carbide mai rufi graphite, silicon carbide (SiC), da silicon (Si) yawanci ana amfani da su don masu cutarwa dangane da takamaiman yanayin zafi da sinadarai. PureSiC® CVD SiC da ClearCarbon™ ultra-tsarki abu wanda ke ba da ingantaccen yanayin zafi, juriyar lalata, da dorewa.

Bayanin Samfura

Rufin SiC na ginshiƙi na Graphite don aikace-aikacen Semiconductor yana samar da wani yanki tare da mafi girman tsabta da juriya ga yanayin iskar oxygen.
Ana amfani da CVD SiC ko CVI SiC zuwa Graphite na sassa na ƙira mai sauƙi ko hadaddun. Ana iya amfani da sutura a cikin kauri daban-daban kuma zuwa manyan sassa.

SiC shafi/mai rufi na Graphite substrate don Semiconductor

Technical yumbu zaɓi ne na halitta don aikace-aikacen sarrafa zafi na semiconductor ciki har da RTP (Rapid Thermal Processing), Epi (Epitaxial), yaduwa, hadawan abu da iskar shaka, da annealing. CoorsTek yana ba da kayan haɓaka kayan haɓaka na musamman waɗanda aka ƙera don tsayayya da girgizar zafi tare da tsafta mai ƙarfi, mai ƙarfi, aikin maimaituwa don matsanancin zafin jiki.

Siffofin:
· Kyakkyawan Juriya na Shock Thermal
· Kyakkyawan juriya na girgiza jiki
· Kyakkyawan Juriya na Chemical
· Super High Tsafta
· Samuwar a cikin Siffar Maɗaukaki
Ana iya amfani da shi a ƙarƙashin Oxidizing Atmosphere

aikace-aikace:

Wafer yana buƙatar wucewa ta matakai da yawa kafin a shirya don amfani a cikin na'urorin lantarki. Ɗaya mai mahimmanci tsari shine silicon epitaxy, wanda ake ɗaukar wafers a kan graphite susceptors. Kaddarorin da ingancin masu kamuwa da cuta suna da tasiri mai mahimmanci akan ingancin layin epitaxial na wafer.

Abubuwan Haɓaka na Kayan Gilashin Gindi:

Yawaita Bayyana:	1.85 g/cm 3
Juriya na Lantarki:	11 μΩm
Ƙarfin Ƙarfi:	49 MPa (500kgf/cm2)
Taurin Teku:	58
Ash:	<5ppm
Ƙarfafa Ƙarfafawa:	116 W/mK (100 kcal/mhr-℃)