gallium arsenide-phosphide epitaxial

Gallium arsenide-phosphide epitaxial Tsarin, kama da samar da tsarin na substrate ASP irin (ET0.032.512TU), ga. yi na planar ja LED lu'ulu'u.

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Gallium arsenide-phosphide epitaxial Tsarin, kama da samar da tsarin na substrate ASP irin (ET0.032.512TU), ga. yi na planar ja LED lu'ulu'u.

Ma'aunin fasaha na asali
zuwa gallium arsenide-phosphide Tsarin

1, SubstrateGaAs
a. Nau'in ɗabi'a	lantarki
b. Resistivity, ohm-cm	0,008
c. Crystal-latticeorientation	(100)
d. Rashin fahimtar yanayin	(1-3)°

2. Epitaxial Layer GaAs1-х Pх
a. Nau'in ɗabi'a	lantarki
b. Abubuwan da ke cikin phosphorus a cikin shimfidar wuri	daga х = 0 zuwa х ≈ 0,4
c. Abubuwan da ke cikin phosphorus a cikin nau'in abun da ke ciki akai-akai	≈ 0,4
d. Maida hankali, сm3	(0,2-3,0) · 1017
e. Tsawon tsayi a matsakaicin bakan photoluminescence, nm	645-673 nm
f. Tsawon tsayi a matsakaicin madaidaicin bakan electroluminescence	650-675 nm
g. Kauri na dindindin, micron	Akalla 8 nm
h. Layerthickness (duka), micron	Akalla nm 30

3 Farantin tare da Layer epitaxial
a. Juyawa, micron	Mafi yawan 100 um
b. Kauri, micron	360 - 600
c. Square santimita	Akalla 6 cm2
d. Takamaiman ƙarfin haske (bayan yaduwaZn), cd/amp	Akalla 0,05 cd/amp